COMPUTER SIMULATIONS OF LIQUID PHASE EPITAXY OF GAAS IN GA SOLUTION

[1] Carslaw H.S., 1959, CONDUCTION HEAT SOLI, P468

[2] GOODWIN AR, 1968, BRIT J APPL PHYSIC D, V1, P115

[3] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388

[4] HICKS HGB, PRIVATE COMMUNICATIO

[5] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &

[6] KIMBER P, PRIVATE COMMUNICATIO

[7] KING MJ, PRIVATE COMMUNICATIO

[8] Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0

[9] PHENOMENOLOGICAL THEORY ON LIQUID PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (01) : 90 - +

[10] NELSON H, 1963, RCA REV, V24, P603

[1] Carslaw H.S., 1959, CONDUCTION HEAT SOLI, P468

[2] GOODWIN AR, 1968, BRIT J APPL PHYSIC D, V1, P115

[3] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 385 - 388

[4] HICKS HGB, PRIVATE COMMUNICATIO

[5] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GAAS GROWN FROM GA SOLUTION [J]. APPLIED PHYSICS LETTERS, 1967, 11 (05) : 171 - &

[6] KIMBER P, PRIVATE COMMUNICATIO

[7] KING MJ, PRIVATE COMMUNICATIO

[8] Minden H. T., 1970, Journal of Crystal Growth, V6, P228, DOI 10.1016/0022-0248(70)90071-0

[9] PHENOMENOLOGICAL THEORY ON LIQUID PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (01) : 90 - +

[10] NELSON H, 1963, RCA REV, V24, P603