IMPROVEMENT OF THE CRYSTALLINE, OPTICAL AND ELECTRICAL QUALITY OF MOVPE GAINSB LAYERS

被引：12

作者：

BOUGNOT, G

DELANNOY, F

PASCAL, F

GROSSE, P

GIANI, A

KAOUKAB, J

BOUGNOT, J

FOURCADE, R

WALKER, PJ

MASON, NJ

LAMBERT, B

机构：

[1] UNIV MONTPELLIER SCI & TECH LANGUEDOC 2,AGGREGATS MOLEC & MAT INORGAN LAB,CNRS,UA 79,F-34095 MONTPELLIER 5,FRANCE

[2] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

[3] CTR NATL ETUD TELECOMMUN,LCM,F-22301 LANNION,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90511-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ga(1-x)In(x)Sb layers (x < 0.37) are grown on GaSb and GaAs substrates with various initial growth processes including GaSb, SLS, graded or step buffers; the effect of varying the III/V ratio is also observed. The improvement of the morphology, crystalline, electrical and optical quality related to these different ways are examined using optical imaging, X-ray diffraction, 2 K photoluminescence and Hall effect measurements.

引用

页码：502 / 508

页数：7

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