A NOVEL DOUBLE-METAL STRUCTURE FOR VOLTAGE-PROGRAMMABLE LINKS

被引：23

作者：

COHEN, SS

RAFFEL, JI

WYATT, PW

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGA's) as a voltage-programmable link (VPL). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This metal-insulator-metal (MIM) structure has displayed characteristics desirable for use in the emerging FPGA technology.

引用

页码：488 / 490

页数：3

共 3 条

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LIU, DKY
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CHEN, SO
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (04) : 151 - 153

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