A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM-ARSENIDE

被引:40
作者
MIRCEAROUSSEL, A [1 ]
MAKRAMEBEID, S [1 ]
机构
[1] LAB PHYS APPL 3,F-94450 LIMEIL BREVANNES,FRANCE
关键词
D O I
10.1063/1.92247
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1007 / 1009
页数:3
相关论文
共 13 条
[1]   DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J].
BOIS, D ;
CHANTRE, A .
REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03) :631-646
[2]   EFFECT OF ELECTRIC-FIELD ON DEEP-LEVEL TRANSIENTS IN GAAS AND GAP [J].
MAKRAMEBEID, S .
APPLIED PHYSICS LETTERS, 1980, 37 (05) :464-466
[3]  
MAKRAMEBEID S, 1980, P DEFECT CHARACTERIZ
[4]  
MAKRAMEBEID S, UNPUBLISHED
[5]  
MARTIN GM, 1977, ELECTRON LETT, V13, P66
[6]  
MIRCEA A, 1979, I PHYS C SER, V46, P82
[7]  
MITONNEAU A, UNPUBLISHED
[8]   PHONON ASSISTED TUNNEL EMISSION OF ELECTRONS FROM DEEP LEVELS IN GAAS [J].
PONS, D ;
MAKRAMEBEID, S .
JOURNAL DE PHYSIQUE, 1979, 40 (12) :1161-1172
[9]   MULTIPHONON, NON-RADIATIVE TRANSITION RATE FOR ELECTRONS IN SEMICONDUCTORS AND INSULATORS [J].
RIDLEY, BK .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (11) :2323-2341
[10]  
WILLARDSON RK, 1972, SEMICONDUCTOR SEMIME, V8, P370