EFFECT OF CR DOPING ON THE MAGNETORESISTANCE AND SATURATION FIELD OF EPITAXIAL FE1-XCRX(001)/CR(001) MULTILAYERS

被引：10

作者：

DANIELS, BJ

CLEMENS, BM

机构：

[1] Department of Materials Science and Engineering, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Cr doping of the Fe layer on the magnetoresistance and saturation field of epitaxial, sputter-deposited Fe1-xCrx(001)/Cr(001) multilayers was examined. Films with a composition of 100 Å Cr/[14 Å Fe1-xCrx/8 Å Cr]50, where x was varied from 0 to 0.5, were deposited onto single crystal MgO(001). The room temperature magnetoresistance was constant at approximately 31% for x≤0.2 and decreased with higher Cr concentrations. The saturation field decreased linearly with increasing Cr concentration over the entire range. Doping the Fe layer with Cr results in an increase of the spin-dependent scattering (Δρ) for 0.1≤x≤0.2 and an increase in the sensitivity of these films for all Cr concentrations. © 1995 American Institute of Physics.

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页码：520 / 522

页数：3

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