ANALYTIC REPRESENTATION OF THE SILICON ABSORPTION-COEFFICIENT IN THE INDIRECT TRANSITION REGION

被引:35
作者
GEIST, J [1 ]
MIGDALL, A [1 ]
BALTES, HP [1 ]
机构
[1] UNIV ALBERTA, EDMONTON T6G 2G7, ALBERTA, CANADA
来源
APPLIED OPTICS | 1988年 / 27卷 / 18期
关键词
D O I
10.1364/AO.27.003777
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:3777 / 3779
页数:3
相关论文
共 8 条
[1]   EXCITON AND PHONON EFFECTS IN THE ABSORPTION SPECTRA OF GERMANIUM AND SILICON [J].
MACFARLANE, GG ;
MCLEAN, TP ;
QUARRINGTON, JE ;
ROBERTS, V .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :388-392
[2]   FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J].
MACFARLANE, GG ;
MCLEAN, TP ;
QUARRINGTON, JE ;
ROBERTS, V .
PHYSICAL REVIEW, 1958, 111 (05) :1245-1254
[3]  
MCLEAN TP, 1960, PROG SEMICOND, V5, P99
[4]  
MCLEAN TP, 1960, PROGR SEMICOND, V5, P53
[5]  
PALMER JM, 1984, P SOC PHOTOOPT INSTR, V499, P7
[6]   ABSORPTION-COEFFICIENT OF SILICON FOR SOLAR-CELL CALCULATIONS [J].
RAJKANAN, K ;
SINGH, R ;
SHEWCHUN, J .
SOLID-STATE ELECTRONICS, 1979, 22 (09) :793-795
[7]   TEMPERATURE-DEPENDENCE OF THE OPTICAL-PROPERTIES OF SILICON [J].
WEAKLIEM, HA ;
REDFIELD, D .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1491-1493
[8]  
WEAKLIEM HA, COMMUNICATION