CURRENT INSTABILITIES IN N-INP

被引：7

作者：

GRUBIN, HL

SHAW, MP

CONWELL, EM

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 18卷 / 06期

关键词：

D O I：

10.1063/1.1653633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：211 / &

共 14 条

[1] INFLUENCE OF BOUNDARY CONDITIONS ON HIGH-FIELD DOMAINS IN GUNN DIODES [J].

BOER, KW ;

DOHLER, G .

PHYSICAL REVIEW, 1969, 186 (03) :793-&

[2] GUNN EFFECT [J].

BUTCHER, PM .

REPORTS ON PROGRESS IN PHYSICS, 1967, 30 :97-+

[3] MICROWAVE GENERATION BY INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS [J].

COLLIVER, D ;

HILSUM, C ;

JOYCE, BD ;

MORGAN, JR ;

REES, HD ;

KNIGHT, JR .

ELECTRONICS LETTERS, 1970, 6 (14) :436-&

[4]

CONWELL EM, 1970, IEEE DEVICE, VED17, P262

[5] LSA OSCILLATOR-DIODE THEORY [J].

COPELAND, JA .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) :3096-+

[6] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) :141-&

[7] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[8] INSTABILITIES OF INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS [J].

HILSUM, C ;

MULLIN, JB ;

PREW, BA ;

REES, HD ;

STRAUGHAN, BW .

ELECTRONICS LETTERS, 1970, 6 (10) :307-+

[9] BAND STRUCTURE AND HIGH-FIELD TRANSPORT PROPERTIES OF INP [J].

JAMES, LW ;

VANDYKE, JP ;

HERMAN, F ;

CHANG, DM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :3998-+

[10]

KROEMER H, 1968, IEEE DEVICE, VED15, P819

← 1 2 →