STUDY OF SURFACE PASSIVATION OF INP

被引:6
作者
FAUR, M
FAUR, M
JENKINS, P
GORADIA, M
BAILEY, S
JAYNE, D
WEINBERG, I
GORADIA, C
机构
[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135
[2] CASE WESTERN RESERVE UNIV,CLEVELAND,OH 44106
[3] CLEVELAND STATE UNIV,DEPT ELECT ENGN,CLEVELAND,OH 44115
关键词
D O I
10.1002/sia.740151207
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effects of various surface preparation procedures, including chemical treatments in HF, HNO3, o‐H3PO4 and H2SO4 solutions and anodic oxidation, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of n+p or p+n InP solar cells made by thermal diffusion. The InP substrates used in this study were p‐type Cd‐doped to a level of 1.7 × 1016 cm−3, Zn‐doped to levels of 2.2 × 1016 and 1.2 × 1018 cm−3 and n‐type S‐doped to 4.4 × 1018 cm−3. The passivating properties have been evaluated from photoluminescence (PL) data; good agreement was found between the level of surface passivation and the composition of different surface layers as revealed by x‐ray photoelectron spectroscopy (XPS) analysis. Copyright © 1990 John Wiley & Sons Ltd.
引用
收藏
页码:745 / 750
页数:6
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