SILICA SURFACE SENSITIZATION AND CHEMICAL SENSORS

被引：22

作者：

CLECHET, P

JAFFREZICRENAULT, N

机构：

[1] Laboratoire de Physicochimie des Interfaces, URA CNRS 404, Ecole Centrale de Lyon, Ecully, F-69131

来源：

ADVANCED MATERIALS | 1990年 / 2卷 / 6-7期

关键词：

CHEMFETs/ISFETs; Monolayers; pH Sensitivity; Surface Modification;

D O I：

10.1002/adma.19900020605

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The surface modification of materials and its control now appear to be a challenge in many fields of technology, for example, composites, chromatography, and chemical sensors. A well controlled engineering process for producing self‐assembled long chain monolayers on a thin thermal silica layer has been perfected in our laboratory. The monolayers are covalently bonded to SiO2/Si(100) heterostructures and have been chemically (chemical analysis, pH sensitivity) and physically (spectroellipsometric and capacitance measurements) characterized. The application of this process for sensitizing the surface of the silica insulator used in CHEMFET chemical sensors is presented using the example of an Ag® sensitive device. The main features of this sensor are its short response time(< 2 s) and its long lifetime (> 3 months). Copyright © 1990 Verlag GmbH & Co. KGaA, Weinheim

引用

页码：293 / 298

页数：6

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