CMOS CIRCUITS FOR PERIPHERAL CIRCUIT INTEGRATED POLY-SI TFT LCD FABRICATED AT LOW-TEMPERATURE BELOW 600-DEGREES-C

CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCD's were fabricated at low temperature below 600-degrees-C on a glass substrate. The maximum operation frequency of the CMOS shift register was 1.25 MHz. The total power consumption of the 10-stage CMOS shift registers at a clock frequency of 46.8 kHz and a power supply voltage of 20 V was 10-mu-W, which is three orders of magnitudes smaller than that of the 10-stage nMOS shift registers. The rise and fall times of the CMOS buffers were proportional to the inverse of the channel width, and the write time t(w) of the gray-scale representation circuits was proportional to the line memory capacitance.