HIGH-RESOLUTION ABSORPTION-MEASUREMENTS IN GOLD DOPED SI/GE ALLOYS

被引：8

作者：

HELLQVIST, EL

NAGESH, V

GRIMMEISS, HG

KLEVERMAN, M

机构：

[1] Department of Solid State Physics, University of Lund, Lund, S-22100

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 01期

关键词：

D O I：

10.1007/BF00323433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution studies of a deep impurity in Si/Ge alloys are presented. It is shown that gold forms at least two different centers, a single substitutional defect and a gold pair. The energy structure and internal transitions of these defects were studied for different alloy compositions and implications of possible strain and alloying effects are briefly discussed.

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页码：43 / 46

页数：4

相关论文

共 15 条

[1] EFFECTIVE MASS-LIKE STATES OF THE DEEP ACCEPTOR LEVEL OF AU AND PT IN SILICON [J].

ARMELLES, G ;

BARRAU, J ;

BROUSSEAU, M ;

PAJOT, B ;

NAUD, C .

SOLID STATE COMMUNICATIONS, 1985, 56 (03) :303-305

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[3] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J].

BEVK, J ;

MANNAERTS, JP ;

FELDMAN, LC ;

DAVIDSON, BA ;

OURMAZD, A .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :286-288

[4]

EBERL K, 1989, HETEROSTRUCTURES SI, V160, P153

[5] HYDROGEN-LIKE EXCITED-STATES OF A DEEP DONOR IN GERMANIUM [J].

GRIMMEISS, HG ;

LARSSON, K ;

MONTELIUS, L .

SOLID STATE COMMUNICATIONS, 1985, 54 (10) :863-865

[6]

GRIMMEISS HG, 1989, MAT RES SOC S P, V163, P3

[7] HIGH-RESOLUTION STUDIES OF SULFUR-RELATED AND SELENIUM-RELATED DONOR CENTERS IN SILICON [J].

JANZEN, E ;

STEDMAN, R ;

GROSSMANN, G ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1984, 29 (04) :1907-1918

[8] SYMMETRICALLY STRAINED SI/GE SUPERLATTICES ON SI SUBSTRATES [J].

KASPER, E ;

KIBBEL, H ;

JORKE, H ;

BRUGGER, H ;

FRIESS, E ;

ABSTREITER, G .

PHYSICAL REVIEW B, 1988, 38 (05) :3599-3601

[9] OBSERVATION OF P1/2 RESONANT STATES AND FANO RESONANCES OF THE DEEP GOLD ACCEPTOR IN SILICON [J].

KLEVERMAN, M ;

OLAJOS, J ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1987, 35 (08) :4093-4094

[10]

KLEVERMAN M, 1990, 20TH P INT C PHYS SE