HIGH-TEMPERATURE STABILITY OF A SPECTRAL HOLE BURNT IN SM-DOPED SRFCL CRYSTALS

被引:63
作者
ZHANG, JH
HUANG, SH
YU, JQ
机构
[1] Changchun Institute of Physics, Academia Sinica, Changchun
关键词
D O I
10.1364/OL.17.001146
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A long-lived spectral hole at high temperature is observed in SrFCl:Sm. The measured hole lifetimes at 292 and 315 K are approximately 14 days and 16 h, respectively. Thermally induced hole filling is studied by using the time-decay experimental data of the hole area at different temperatures and by assuming a thermally activated process. An average thermal activation energy of 1.2 eV needed for hole filling is deduced.
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收藏
页码:1146 / 1148
页数:3
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