SENSITIVE HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SILICON MEMBRANE

被引：41

作者：

NEFF, H

LAUKEMPER, J

KHREBTOV, IA

TKACHENKO, AD

STEINBEISS, E

MICHALKE, W

BURNUS, M

HEIDENBLUT, T

HEFLE, G

SCHWIERZI, B

机构：

[1] SI VAVILOV STATE OPT INST,ST PETERSBURG 199034,RUSSIA

[2] INST PHYS HOCHTECHNOL,D-07743 JENA,GERMANY

[3] UNIV HANNOVER,INST HALBLETERTECHNOL & WERKSTOFFE ELEKTROTECH,D-30167 HANNOVER,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting transition edge bolometers on micromachined silicon membranes have been fabricated. The optical response is 580 V/W at a time constant of 0.4 ms. The detectivity D* is 3.8×109(cm Hz1/2 W-1) at a temperature of 84.5 K and within the frequency regime 100<f<300 Hz. This is one of the fastest composite type bolometers ever reported. Upon thermal optimization, this type of detector should be competitive with state-of-the-art quantum detectors.© 1995 American Institute of Physics.

引用

页码：2421 / 2423

页数：3

共 11 条

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