GROWTH OF NIOBIUM SINGLE-CRYSTALS BY PULLING FROM A MELT ON A PEDESTAL .3. CHARACTERISTIC ARRANGEMENT OF DISLOCATIONS

被引:2
作者
NARAMOTO, H
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关键词
D O I
10.1016/0022-0248(78)90014-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:475 / 482
页数:8
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共 18 条
[1]   GROWTH OF SI SINGLE-CRYSTALS FROM MELT AND IMPURITY INCORPORATION MECHANISMS [J].
ABE, T .
JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :463-467
[2]  
Authier A., 1967, ADVANCES XRAY ANALYS, V10, P9
[3]   APPLICATION OF CONTRAST CONDITIONS TO DYNAMICAL IMAGES OF IMMOBILE DISLOCATIONS [J].
BOETTINGER, WJ ;
BURDETTE, HE ;
KURIYAMA, M .
PHILOSOPHICAL MAGAZINE, 1976, 34 (01) :119-127
[4]   VACANCY CONDENSATION AND ORIGIN OF DISLOCATIONS IN GROWTH FROM MELT [J].
BOLLING, GF ;
FAINSTEIN, D .
PHILOSOPHICAL MAGAZINE, 1972, 25 (01) :45-+
[5]   OBSERVATIONS ON INTERACTIONS OF GLISSILE DISLOCATIONS IN NIOBIUM BY TRANSMISSION ELECTRON-MICROSCOPY [J].
CHANG, CP ;
CHEN, CW .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (02) :549-560
[6]   SILICON CRYSTALS FREE OF DISLOCATIONS [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (04) :736-737
[7]   FORMATION OF SWIRL DEFECTS IN SILICON BY AGGLOMERATION OF SELF-INTERSTITIALS [J].
FOLL, H ;
GOSELE, U ;
KOLBESEN, BO .
JOURNAL OF CRYSTAL GROWTH, 1977, 40 (01) :90-108
[8]  
FOURDEUX A, 1960, J I MET, V89, P31
[9]  
France LK., 1967, MET SCI, V1, P65, DOI [10.1179/msc.1967.1.1.65, DOI 10.1179/MSC.1967.1.1.65]
[10]  
Hirth J.P., 1982, THEORY DISLOCATIONS