INVESTIGATION OF THE CRITICAL LAYER THICKNESS IN ELASTICALLY STRAINED INGAAS/GAALAS QUANTUM WELLS BY PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY

被引：43

作者：

REITHMAIER, JP ^{[1
]}

CERVA, H ^{[1
]}

LOSCH, R ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST,FORSCHUNGSINST,D-6100 DARMSTADT,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：48 / 50

页数：3

共 8 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

ANDERSON, NG ;

LAIDIG, WD ;

KOLBAS, RM ;

LO, YC .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367

[3] STRAIN EFFECTS IN INGAAS/HAAS SUPERLATTICES [J].

DAHL, DA .

SOLID STATE COMMUNICATIONS, 1987, 61 (12) :825-826

[4] PHOTOLUMINESCENCE IN STRAINED INGAAS-GAAS HETEROSTRUCTURES [J].

GAL, M ;

TAYLOR, PC ;

USHER, BF ;

ORDERS, PJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3898-3901

[5] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].

JI, G ;

HUANG, D ;

REDDY, UK ;

HENDERSON, TS ;

HOUDRE, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373

[6]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[7]

OKAMOTO A, 1987, JPN J APPL PHYS, V26, P339

[8]

UNLU H, 1988, SOLID STATE TECHNOL, V31, P83

← 1 →