A FULLY INTEGRATED SILICON-BASED 40-V THERMAL INK JET IC

被引:5
作者
HAWKINS, WG
BURKE, CJ
WATROBSKI, TE
TELLIER, TA
VERDONCKTVANDEBROEK, S
CHOW, TP
机构
[1] Xerox Corp., Webster Research Center, Webster, NY 14580, 800 Phillips Road
[2] Rensselaer Polytechnic Institute, Troy
关键词
5;
D O I
10.1016/0167-9317(92)90415-N
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A fully-integrated silicon-based thermal ink jet printhead which produces high speed. laser-quality printing at 300 spots per inch resolution is described. Monolithic integration of the 5-V logic circuitry, 13-V predriver circuitry, 40-V MOSFETs, and 192 n+ polysilicon heater elements requires multiple process and device design trade-offs. The TIJ printhead is customer replaceable and must be protected from far greater static discharges than normal VLSI circuits. Design issues and failure mechanisms of the power MOSFETs and ESD protection devices are discussed. Two-dimensional simulations which include parasitic bipolar action and lattice heating illustrate the design concepts. Electrical characteristics of the 40-V power MOSFETs and 16-kV ESD protection devices are presented.
引用
收藏
页码:165 / 170
页数:6
相关论文
共 5 条
[1]  
Hewlett-Packard Journal, 39, 5, pp. 51-98, (1988)
[2]  
Hawkins, Et al., DRC Digest, (1990)
[3]  
Technology Modeling Associates, Effect of chloroquine on cultured fibroblasts: release of lysosomal hydrolases and inhibition of their uptake., Biochem Biophys Res Commun, (1991)
[4]  
Pelella, Et al., EOS/ESD proc., (1985)
[5]  
Rountree, Hutchins, NMOS protection circuitry, IEEE Transactions on Electron Devices, pp. 910-917, (1985)