35 GHZ FT AND 26 GHZ FMAX GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：4

作者：

PRASAD, SJ ^{[1
]}

HAYNES, C ^{[1
]}

VETANEN, B ^{[1
]}

PARK, S ^{[1
]}

BEERS, I ^{[1
]}

DAVITO, D ^{[1
]}

机构：

[1] EPITRONICS CORP,PHOENIX,AZ 85027

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

BIPOLAR DEVICES; TRANSISTORS;

D O I：

10.1049/el:19921509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High gain (beta = 175) 3 x 10 mum2 GaInP/GaAs HBTs fabricated using a triple mesa etched non-selfaligned process are reported. The devices show a current gain of 46 even at a collector current of 1 muA. Microwave measurements indicate the devices have 35 GHz f(t) and 26 GHz f(max).

引用

页码：2341 / 2343

页数：3

共 3 条

[1] 1ST MICROWAVE CHARACTERIZATION OF LP-MOCVD GROWN GALNP/GAAS SELF-ALIGNED HBT [J].

DELAGE, SL ;

DIFORTEPOISSON, MA ;

BLANCK, H ;

BRYLINSKI, C ;

CHARTIER, E ;

COLLOT, P .

ELECTRONICS LETTERS, 1991, 27 (03) :253-254

[2] GAAS BIPOLAR-TRANSISTORS WITH A GA0.5IN0.5P HOLE BARRIER LAYER AND CARBON-DOPED BASE GROWN BY MOVPE [J].

LAUTERBACH, T ;

PLETSCHEN, W ;

BACHEM, KH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (04) :753-756

[3] NEAR-IDEAL IV CHARACTERISTICS OF GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LIU, W ;

FAN, SK .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) :510-512

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