ELECTRONIC-ENERGY LEVELS OF SUBSTITUTIONAL DEFECT PAIRS IN SI

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387

[2] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426

[3] THEORY OF DEEP TRAPS AT SEMICONDUCTOR INTERFACES [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 975 - 976

[4] ELECTRONIC-ENERGY LEVELS OF POINT-DEFECTS AT THE GASB (110) SURFACE [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (05) : 419 - 422

[5] ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6

[6] THEORY OF FRENKEL CORE EXCITONS AT SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 911 - 914

[7] ALLEN RE, APPL SURF SCI

[8] ALLEN RE, 1980, INT J QUANTUM CHEM S, V14, P607

[9] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 915 - 925

[10] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 383 - 387

[2] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1423 - 1426

[3] THEORY OF DEEP TRAPS AT SEMICONDUCTOR INTERFACES [J]. APPLIED PHYSICS LETTERS, 1981, 39 (12) : 975 - 976

[4] ELECTRONIC-ENERGY LEVELS OF POINT-DEFECTS AT THE GASB (110) SURFACE [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (05) : 419 - 422

[5] ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6

[6] THEORY OF FRENKEL CORE EXCITONS AT SURFACES [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 911 - 914

[7] ALLEN RE, APPL SURF SCI

[8] ALLEN RE, 1980, INT J QUANTUM CHEM S, V14, P607

[9] SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS [J]. PHYSICAL REVIEW B, 1981, 24 (02): : 915 - 925

[10] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895