FLUCTUATIONS LOCATED AT CURRENT FILAMENT BOUNDARIES IN N-GAAS

被引：20

作者：

BRANDL, A

VOLCKER, M

PRETTL, W

机构：

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 72卷 / 09期

关键词：

D O I：

10.1016/0038-1098(89)90411-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：847 / 850

页数：4

共 19 条

[1] NONLINEAR RESPONSE AND CHAOS IN SEMICONDUCTORS INDUCED BY IMPACT IONIZATION [J].

AOKI, K ;

YAMAMOTO, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (02) :111-125

[2] FILAMENTARY INJECTION IN SEMI-INSULATING SILICON [J].

BARNETT, AM ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4215-&

[3] PROPERTIES OF SOLITARY CURRENT FILAMENTS IN SILICON PIN DIODES [J].

BAUMANN, H ;

SYMANCZYK, R ;

RADEHAUS, C ;

PURWINS, HG ;

JAGER, D .

PHYSICS LETTERS A, 1987, 123 (08) :421-424

[4] OSCILLATIONS AND CHAOTIC CURRENT FLUCTUATIONS IN N-GAAS [J].

BRANDL, A ;

GEISEL, T ;

PRETTL, W .

EUROPHYSICS LETTERS, 1987, 3 (04) :401-406

[5]

BRANDL A, 1989, IN PRESS, V55, P238

[6] ANOMALOUS PLASMA-DIFFUSION TRANSVERSE TO HIGH MAGNETIC-FIELDS IN INSB [J].

BRUHNS, H ;

HUBNER, K ;

NEIDIG, A ;

SCHENK, L ;

SCHNEIDER, W .

APPLIED PHYSICS, 1976, 10 (01) :33-39

[7] FAR-INFRARED RADIATION CONTROLLED CHAOS IN NORMAL-GAAS [J].

FRANK, U ;

BRANDL, A ;

PRETTL, W .

SOLID STATE COMMUNICATIONS, 1989, 69 (09) :891-894

[8] OBSERVATION OF CHAOTIC BEHAVIOR IN AN ELECTRON-HOLE PLASMA IN GE [J].

HELD, GA ;

JEFFRIES, C ;

HALLER, EE .

PHYSICAL REVIEW LETTERS, 1984, 52 (12) :1037-1040

[9] RESONANCE IMAGING OF DYNAMICAL FILAMENTARY CURRENT STRUCTURES IN A SEMICONDUCTOR [J].

MAYER, KM ;

PARISI, J ;

PEINKE, J ;

HUEBENER, RP .

PHYSICA D, 1988, 32 (02) :306-317

[10] SPATIALLY RESOLVED OBSERVATION OF CURRENT FILAMENT DYNAMICS IN SEMICONDUCTORS [J].

MAYER, KM ;

GROSS, R ;

PARISI, J ;

PEINKE, J ;

HUEBENER, RP .

SOLID STATE COMMUNICATIONS, 1987, 63 (01) :55-59

← 1 2 →