ELECTRICAL PROPERTIES OF SN-DOPED GAP

被引：10

作者：

CASEY, HC

ERMANIS, F

LUTHER, LC

DAWSON, LR

VERLEUR, HW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 05期

关键词：

D O I：

10.1063/1.1660499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2130 / &

相关论文

共 12 条

[1] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP
CASEY, HC
ERMANIS, F
WOLFSTIRN, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +
[3] DAWSON LR, UNPUBLISHED
[4] Optical properties of the donor tin in gallium phosphide
Dean, P. J.
Faulkner, R. A.
Kimura, S.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4062 - 4076
[5] PAIR SPECTRA INVOLVING SHALLOW ACCEPTOR MG IN GAP
DEAN, PJ
SCHONHERR, EG
ZETTERSTROM, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3475 - +
[6] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
DEAN, PJ
FROSCH, CJ
HENRY, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5631 - &
[7] DEAN PJ, PRIVATE COMMUNICATIO
[8] THERMAL IONIZATION ENERGIES OF CD AND ZN IN GAP
ERMANIS, F
CASEY, HC
WOLFSTIRN, K
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4856 - +
[9] PAIR SPECTRA INVOLVING DONOR AND/OR ACCEPTOR GERMANIUM IN GAP
GERSHENZON, M
TRUMBORE, FA
MIKULYAK, RM
KOWALCHIK, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 486 - +
[10] EPITAXIAL GROWTH OF ZINC- AND CADMIUM-DOPED GALLIUM PHOSPHIDE BY GALLIUM CHLORIDE VAPOR TRANSPORT
LUTHER, LC
ROCCASECCA, DD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 850 - +