THE SCHOTTKY DEVICE BASED ON DOPED POLY(PARA-PHENYLENE)

被引：23

作者：

GOLDENBERG, LM

KRINICHNYI, VI

NAZAROVA, IB

机构：

[1] Institute of Chemical Physics, U.S.S.R. Academy of Sciences, Chernogolovka

来源：

SYNTHETIC METALS | 1991年 / 44卷 / 02期

关键词：

D O I：

10.1016/0379-6779(91)91835-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A sandwich-type Schottky element based on doped poly(p-phenylene) has been investigated. The doped poly(p-phenylene) was shown to give rectifying contact for indium. The Schottky device parameters have been evaluated from the voltage-current characteristics.

引用

页码：199 / 203

页数：5

共 8 条

[1] Bredas J. L., 1986, HDB CONDUCTING POLYM, VII, P859
[2] GOLDENBERG LM, IN PRESS SYNTH MET
[3] KANICKI J, 1986, HDB CONDUCTING POLYM, V1, P543
[4] ORGANIC HETEROJUNCTIONS UTILIZING 2 CONDUCTING POLYMERS - POLY(ACETYLENE) POLY(N-METHYLPYRROLE) JUNCTIONS
KOEZUKA, H
HYODO, K
MACDIARMID, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1279 - 1284
[5] KUZMANY H, 1985, SPRINGER SERIES SOLI, V1
[6] Rhoderick E H, 1980, METAL SEMICONDUCTOR
[7] Skotheim T., 1986, HDB CONDUCTING POLYM, V1
[8] Skotheim T. A., 1986, HDB CONDUCTING POLYM, V2

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