ELECTRICAL AND PHOTOELECTRICAL CHARACTERISTICS OF HETEROSTRUCTURES WITH AMORPHOUS-CARBON FILMS

被引：19

作者：

POLYAKOV, VI ^{[1
]}

PEROV, PI ^{[1
]}

ERMAKOV, MG ^{[1
]}

ERMAKOVA, ON ^{[1
]}

ELINSON, VM ^{[1
]}

SLEPTSOV, VV ^{[1
]}

机构：

[1] NPO VAKUUMMASHPRIBOR,MOSCOW 113105,USSR

来源：

THIN SOLID FILMS | 1992年 / 212卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90525-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical and photoelectrical characteristics of heterostructures fabricated by ion-plasma deposition of thin amorphous carbon films onto silicon substrates were studied. In particular, current-voltage, capacitance-voltage and charge transient characteristics were measured at different illumination intensities. A charge memory effect, resulting in a frequency dispersion of electrical and photoelectrical characteristics was observed, and its dependence on the structural parameters of the films were investigated. Multilayer structures were prepared using thin (less than or equal to 5 nm) amorphous hydrogenated carbon layers with two values of forbidden gap (mobility gap). the narrow gap layers being wells and the wider gap layers being barriers. Current-voltage and capacitance-voltage characteristics of these structures revealed some features which are related to the confinement of carriers in the potential wells and their resonant tunneling through barriers. Possible applications of the structures as photosensors and dynamical memory elements were demonstrated.

引用

页码：226 / 231

页数：6

共 9 条

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[2]

ELINSON VM, 1991, MIKROELEKTRONIKA, V20, P218

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