SEMICONDUCTOR-METAL TRANSITION AND THE ONSET OF ITINERANT FERROMAGNETISM IN THE HEUSLER PHASES TICOSN-TICOSB

被引:40
作者
KOUACOU, MA [1 ]
PIERRE, J [1 ]
SKOLOZDRA, RV [1 ]
机构
[1] Y FRANKO UNIV, DEPT INORGAN CHEM, LVOV 290005, UKRAINE
关键词
D O I
10.1088/0953-8984/7/37/010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The magnetic and transport properties of the TiCoSnxSb1-x solid solutions with the cubic MgAgAs structure have been studied, and show the onset of ferromagnetism associated with a semiconductor to metal transition, keeping the same 3d elements and varying the number of s-p electrons. The transition from TiCoSn ferromagnetic metal to the non-magnetic semiconductor TiCoSb occurs through an intermediate metallic Pauli-like state. The variations of the Curie temperature as a function of saturation and effective paramagnetic moments are related to the itinerant ferromagnetism model. A comparison is made with the TiCoxNi1-xSn series, where the transition occurs directly from ferromagnetic metal to semiconducting state.
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收藏
页码:7373 / 7385
页数:13
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