SPATIAL VARIATION OF QUASI-FERMI POTENTIALS IN REVERSE-BIASED P+-N JUNCTIONS AND ITS IMPLICATIONS IN TRANSITION REGION CAPACITANCE CALCULATIONS

被引：6

作者：

CSERVENY, SI

BULUCEA, CD

机构：

[1] Polytechnic Institute of Bucharest, Bucharest, Romania

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 02期

关键词：

D O I：

10.1109/T-ED.1969.16594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spatial variation of the quasi-Fermi potentials in asymmetrical step p+-n junctions under reverse-bias conditions is analyzed following an approximate procedure already described in the literature for the symmetrical junctions. The results obtained in this analysis are used to check the validity of the quasi-equilibrium approximation in capacitance calculations. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：220 / +

页数：1

共 8 条

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 839 - +
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