COMPUTER-AIDED ANALYSIS OF ONE-DIMENSIONAL THERMAL TRANSIENTS IN N-P-N POWER TRANSISTORS

被引：27

作者：

CHRYSSAFIS, A ^{[1
]}

LOVE, W ^{[1
]}

机构：

[1] CRANFIELD INST TECHNOL,DEPT ELECTR & CONTROL ENGN,CRANFIELD MK43 0AL,BEDFORDSHIRE,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 03期

关键词：

D O I：

10.1016/0038-1101(79)90029-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An algorithm is presented which permits the one-dimensional simulation of thermal transients in n-p-n transistors. Band distortion effects, temperature dependent mobilities and thermal conductivity are incorporated into the model. Accurate expressions are derived for the heat generated at any point within the semiconductor and the finite difference forms of the current continuity equations. Results showing the internal device behaviour under various bias conditions are presented. © 1979.

引用

页码：249 / 256

页数：8

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