ION-BEAM ETCHING MECHANISM OF PMMA BASED RESISTS BY NOBLE-GAS IONS

被引：5

作者：

BORZENKO, TB

KOVAL, YI

KUDRYASHOV, VA

机构：

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)90168-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model of resist ion beam etching (IBE) by noble gases ions is suggested. It is based on data of the influence of ion and electron irradiation on the properties of PMMA-based resists. PMMA resistance to IBE after such an irradiation is under investigation. In accordance with the proposed model in addition to physical sputtering, radiation induced processes make a considerable contribution to IBE of polymer resists.

引用

页码：337 / 340

页数：4