ENERGY RELAXATION OF WARM CARRIERS IN GERMANIUM AND SILICON

被引：38

作者：

HESS, K

SEEGER, K

机构：

[1] Ludwig Boltzmann-Institut für Festkörperphysik, Wien

[2] E.E. Dept. Texas Tech. College, Lubbock, 79409, Texas

来源：

ZEITSCHRIFT FUR PHYSIK | 1969年 / 218卷 / 05期

关键词：

D O I：

10.1007/BF01392422

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental data on warm carrier energy relaxation times in germanium and silicon are reported. Measurements were done by the method of harmonic mixing of microwaves 1 in the temperature range between 77 and 200 °K. Relaxation times obtained for n-type germanium are in agreement with data reported by Morgan 2 as well as that of Seeger 3 and Gibsonet al. 4. Measured energy relaxation times for p-type germanium as well as for n- and p-type silicon are reported here for the first time. A qualitative interpretation is given in terms of scattering by acoustic and optical phonons. © 1969 Springer-Verlag.

引用

页码：431 / &

共 7 条

[1] AICHELBURG P, PRIVATE COMMUNICATIO
[2] Conwell E M, 1967, HIGH FIELD TRANSPORT
[3] A STUDY OF ENERGY-LOSS PROCESSES IN GERMANIUM AT HIGH ELECTRIC FIELDS USING MICROWAVE TECHNIQUES
GIBSON, AF
GRANVILLE, JW
PAIGE, EGS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) : 198 - 217
[4] MICROWAVE CONDUCTIVITY OF SILICON AND GERMANIUM
HOLM, JD
CHAMPLIN, KS
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 275 - &
[5] MORGAN TN, 1965, PHYS REV, V137, P1573
[6] HARMONIC MIXING OF MICROWAVES BY WARM ELECTRONS IN GERMANIUM - (NONOHMIC AT HIGH FIELD - E/T)
SCHNEIDER, W
SEEGER, K
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 133 - +
[7] BEWEGLICHKEITSANISOTROPIE UND RELAXATION WARMER ELEKTRONEN IN N-TYP GERMANIUM
SEEGER, K
[J]. ZEITSCHRIFT FUR PHYSIK, 1963, 172 (01): : 68 - &

← 1 →