PREPARATION OF THICK CRYSTALLINE FILMS OF TIN OXIDE AND POROUS GLASS PARTIALLY FILLED WITH TIN OXIDE

被引：19

作者：

BARTHOLOMEW, RF

GARFINKEL, HM

机构：

[1] Research and Development Laboratories, Corning Glass Works, Corning, New York

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 09期

关键词：

D O I：

10.1149/1.2412279

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A method is described for producing films of SnO2 on a 96% silica glass substrate by oxidation of stannous chloride. Surface x-ray patterns of such films showed the preferred orientation of the films depended on temperature and time of growth. The pores of porous glass were partially filled with SnO2 by the same technique used for the growth of the films. The measured resistivities of the porous glass-tin oxide material are discussed in terms of a model of cylindrical noninterconnecting pores going from one side of the sample to the other. © 1969, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1205 / +

页数：1

共 8 条

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[2] [Anonymous], 1953, VACUUM, DOI DOI 10.1016/0042-207X(53)90411-4
[3] DELIMARSKII IK, 1961, ELECTROCHEMISTRY FUS, P102
[4] KELLEY KK, 1960, 584 BUR MIN B
[5] KUZNETSOV AY, 1960, SOV PHYS-SOL STATE, V2, P30
[6] MURPHY JJ, PRIVATE COMMUNICATIO
[7] DEVITRIFICATION OF TIN OXIDE FILMS (DOPED AND UNDOPED) PREPARED BY REACTIVE SPUTTERING
SINCLAIR, WR
PETERS, FG
STILLING.DW
KOONCE, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) : 1096 - &
[8] SINCLAIR WR, 1963, J AM CERAM SOC, V46, P20

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