DETERMINATION OF THE FLAT BAND POTENTIAL FOR IN2S3 ELECTROLYTE INTERFACES

被引：17

作者：

HERRASTI, P ^{[1
]}

FATAS, E ^{[1
]}

HERRERO, J ^{[1
]}

ORTEGA, J ^{[1
]}

机构：

[1] CTR INVEST ENERGET MEDIOAMBIENTALES & TECHNOL,INST ENERGIAS RENOVABLES,E-28049 MADRID,SPAIN

来源：

ELECTROCHIMICA ACTA | 1990年 / 35卷 / 02期

关键词：

D O I：

10.1016/0013-4686(90)87008-P

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Flat band potentials (Vfb) of In2S3 polycrystalline thin films obtained by chalcogenization of electroplated metallic indium films on Ti substrates with a flowing stream of H2S gas have been obtained. The variation of this potential with different redox couples, solution concentration and pH values has been studied. Photoelectrochemical characterization of the electrodes was accomplished in aqueous polysulphide solutions and the application of the Gärtner-Butler model to the semiconductor/electrolyte interface makes it possible to obtain the semiconductor energy gap. The value obtained is 2.06 eV, corresponding to a direct allowed transition. © 1990.

引用

页码：345 / 349

页数：5

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