CAPACITANCE MEASUREMENTS ON ORGANIC-SEMICONDUCTOR SCHOTTKY BARRIERS - NEW APPROACH

被引：21

作者：

POPOVIC, ZD

机构：

[1] Xerox Research Centre of Canada Limited, Mississauga, Ont. L5L 1J9

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 10期

关键词：

D O I：

10.1063/1.90608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky-barrier parameters of an organic-semiconductor thin-film cell have been determined by a capacitor discharge method which is appropriate for systems where high resistance, trapping, and/or slow impurity ionization dynamics may prevent the use of conventional measurement techniques.

引用

页码：694 / 696

页数：3