SUBPICOSECOND LUMINESCENCE STUDY OF CARRIER TRANSFER IN INGAAS-INP MULTIPLE QUANTUM-WELLS

The transfer of carriers from InP barriers into InGaAs quantum wells is investigated with a time resolution of 300 fs using up conversion luminescence technique. Under conditions where bandfilling of hole states is avoided an universal transfer time of 4 ps is observed independent of the well width. The transfer process appears mainly governed by the capture of holes, while the transport of carriers from the barriers to the wells occurs in less than a picosecond. © 1990.