PLANAR SEALED-CHANNEL GALLIUM-ARSENIDE SCHOTTKY-BARRIER CHARGE-COUPLED-DEVICES

被引：7

作者：

CLARK, MD

ANDERSON, CL

JULLENS, RA

KAMATH, GS

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 06期

关键词：

D O I：

10.1109/T-ED.1980.20004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1183 / 1188

页数：6

共 14 条

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EDEN, RC ;

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ANDERSON, SJ ;

BUBULAC, LO .

APPLIED PHYSICS LETTERS, 1978, 32 (06) :383-385

[5]

DEYHIMY I, 1978, OCT P INT C APPL CHA, P279

[6]

DEYHIMY I, 1979 IEDM TECH DIG

[7]

HANSELL GL, COMMUNICATION

[8]

HANSELL GL, 1979, DEC IEEE INT EL DEV

[9] ULTIMATE LIMITS OF CCD PERFORMANCE IMPOSED BY HOT-ELECTRON EFFECTS [J].

HESS, K ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1979, 22 (12) :1025-1033

[10] LARGE-AREA HIGH-EFFICIENCY (ALGA)AS-GAAS SOLAR-CELLS [J].

KAMATH, GS ;

EWAN, J ;

KNECHTLI, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :473-475

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