A METHOD AND APPARATUS FOR SURFACE MODIFICATION BY GAS-CLUSTER ION IMPACT

被引:17
作者
NORTHBY, JA
JIANG, T
TAKAOKA, GH
YAMADA, I
BROWN, WL
SOSNOWSKI, M
机构
[1] KYOTO UNIV,ION BEAM ENGN LAB,KYOTO 606,JAPAN
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
[3] NEW JERSEY INST TECHNOL,NEWARK,NJ 07102
关键词
D O I
10.1016/0168-583X(93)95072-D
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report here a preliminary study of the effects of Ar cluster ions of relatively low energy (15 --> 30 keV) on Si surfaces and on Au films deposited on Si. The cluster size distribution was measured by time of flight and retarding potential methods. The mean cluster size was varied between 150 and 600 atoms so that the mean energy per atom in a cluster was of the order of 100 eV. The irradiated samples were analyzed by RBS and channeling and their surfaces were examined with SEM.
引用
收藏
页码:336 / 340
页数:5
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