HIGHLY LINEAR GAAS HALL DEVICES FABRICATED BY ION-IMPLANTATION

被引：21

作者：

HARA, T

MIHARA, M

TOYODA, N

ZAMA, M

机构：

[1] MATSUSHITA ELECTR CORP,TOKYO RES LAB,TAMA KU,KAWASAKI 214,JAPAN

[2] MAGNET CORP,KAWASAKI KU,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 01期

关键词：

D O I：

10.1109/T-ED.1982.20661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / 82

页数：5

共 8 条

[1]

HARA T, 1979, SOLID STATE TECHNOL, V22, P69

[2]

HARA T, UNPUB SOLID STATE EL

[3] EPITAXIAL GAAS HALL GENERATORS FOR HIGH-TEMPERATURE APPLICATIONS [J].

HOJO, A ;

TANAKA, S ;

KURU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :261-266

[4] GAAS HALL-EFFECT DEVICES FABRICATED BY ION-IMPLANTATION TECHNIQUE [J].

INADA, T ;

OHKUBO, T ;

KATO, S ;

KITAHARA, M ;

KANDA, Y ;

HARA, T .

ELECTRONICS LETTERS, 1978, 14 (16) :503-505

[5] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J].

MULLER, H ;

EISEN, FH ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :651-655

[6] GAAS HALL ELEMENT FABRICATED BY ION-IMPLANTATION [J].

TANOUE, H ;

TSURUSHIMA, T ;

KATAOKA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1188-1192

[7] EPITAXIAL GALLIUM ARSENIDE AS HALL ELEMENTS [J].

THANAILAKIS, AO ;

COHEN, E .

SOLID-STATE ELECTRONICS, 1969, 12 (12) :997-+

[8]

ZIMAN JM, 1960, ELECTRON PHONONS, P523

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