2-DIMENSIONAL MATHEMATICAL ANALYSIS OF A PLANAR TYPE JUNCTION FIELD-EFFECT TRANSISTOR

被引：15

作者：

KENNEDY, DP

OBRIEN, RR

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 06期

关键词：

D O I：

10.1147/rd.136.0662

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This analysis of the steady-state mechanisms of operation within the transistor shows that the potential distribution within the source-drain channel follows from solutions of Poisson's equation rather than from Laplace's equation. In particular, velocity- limited carrier transport produces a region of carrier accumulation in a region of the source-drain channel previously assumed to be depleted of carriers by the gate junction space-charge layers. The results are presented in graphic form.

引用

页码：662 / &