TEMPERATURE-DEPENDENCE OF RESPONSIVITY IN CLOSELY COMPENSATED EXTRINSIC INFRARED DETECTORS

被引：12

作者：

ALEXANDER, DH ^{[1
]}

BARON, R ^{[1
]}

STAFSUDD, OM ^{[1
]}

机构：

[1] HUGHES RES LABS,FOCAL PIANE PROCESSORS SECT,MALIBU,CA 90265

来源：

关键词：

D O I：

10.1109/T-ED.1980.19822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 77

页数：7

共 6 条

[1] NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON
BARON, R
BAUKUS, JP
ALLEN, SD
MCGILL, TC
YOUNG, MH
KIMURA, H
WINSTON, HV
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 257 - 259
[2] BAUKUS JP, 1978, 1978 P JOINT M IRIS, P263
[3] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[4] BRAGGINS TT, 1978, 1978 P JOINT M IRIS, P235
[5] 3-DIMENSIONAL POOLE-FRENKEL EFFECT
HARTKE, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4871 - &
[6] GIANT TRAPS
LAX, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 66 - 73