DOPING EFFECT OF ANNEALED GAAS-SURFACES ON VACUUM-EPITAXY-GE-(100)GAAS

被引：7

作者：

TSENG, WF

DAVEY, JE

CHRISTOU, A

WILKINS, BR

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.91535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：435 / 437

页数：3

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