SUBSTRATE CURRENT IN SILICON P-CHANNEL MOS TRANSISTORS

被引：7

作者：

RYAN, RD

机构：

[1] Instrumentation and Control Div., Australian Atomic Energy Commission, Sutherland, N.S.W.

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 08期

关键词：

D O I：

10.1109/PROC.1969.7282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Substrate currents are observed in silicon p-channel MOSFET devices. These currents are similar to those observed in n-channel MOSFETs but have a markedly higher threshold voltage. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1424 / &