HYDROGEN PASSIVATION OF DEFECTS AND IMPURITIES IN GAAS AND INP

被引：27

作者：

OMELJANOVSKY, EM ^{[1
]}

PAKHOMOV, AV ^{[1
]}

POLYAKOV, AY ^{[1
]}

机构：

[1] MOSCOW RARE MET INST,MOSCOW 109017,USSR

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 06期

关键词：

D O I：

10.1007/BF02657517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：659 / 670

页数：12

共 44 条

[1]

BALMASHNOV AA, 1986, SOV J TECH PHYS LETT, V12, P1488

[2]

BALMASHNOV AA, IN PRESS SEMICOND SC

[3]

BALMASHNOV AA, 1987, P INT C PLASMA PHYS, P239

[4]

BELOGOROKHOV AI, 1987, FIZ TVERD TELA+, V29, P2886

[5]

BONAPASTA AA, 1988, IN PRESS EUROPHYS LE

[6]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[7] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

CHEVALLIER, J ;

DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

[8]

CHEVALLIER J, 1988, IN PRESS 15TH P C DE

[9] EVIDENCE FOR HYDROGEN TRANSITION-METAL COMPLEXES IN AS-GROWN INDIUM-PHOSPHIDE [J].

CLERJAUD, B ;

COTE, D ;

NAUD, C .

JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) :190-193

[10] PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE [J].

DAUTREMONTSMITH, WC ;

NABITY, JC ;

SWAMINATHAN, V ;

STAVOLA, M ;

CHEVALLIER, J ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1098-1100

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