ELECTRICAL PROPERTIES OF TIN DISELENIDE UNDER PRESSURE

被引:27
作者
LIKHTER, AI [1 ]
PEL, EG [1 ]
PRYSYAZH.SI [1 ]
机构
[1] ACAD SCI USSR,INST HIGH PRESSURE PHYS,MOSCOW,USSR
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 01期
关键词
D O I
10.1002/pssa.2210140132
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:265 / 270
页数:6
相关论文
共 16 条
[1]   SEMICONDUCTING PROPERTIES OF SNSE2 AND GESE2 [J].
ASANABE, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (09) :1789-&
[2]   ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF SNS2 AND SNSE2 [J].
AUYANG, MY ;
COHEN, ML .
PHYSICAL REVIEW, 1969, 178 (03) :1279-&
[3]  
BUSCH G, 1961, HELV PHYS ACTA, V34, P359, DOI DOI 10.5169/SEALS-113181
[4]  
Connell G. A. N., 1969, High Temperatures - High Pressures, V1, P77
[5]   FUNDAMENTAL OPTICAL ABSORPTION IN SNS2 AND SNSE2 [J].
DOMINGO, G ;
ITOGA, RS ;
KANNEWURF, CR .
PHYSICAL REVIEW, 1966, 143 (02) :536-+
[6]  
Evans B. L., 1969, BRIT J APPL PHYS D, V2, P1507
[7]   THEORY OF LAYER STRUCTURES [J].
FIVAZ, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (05) :839-&
[8]   MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].
FIVAZ, R ;
MOOSER, E .
PHYSICAL REVIEW, 1967, 163 (03) :743-&
[9]   MOBILITY OF ELECTRONS IN SNS2 SINGLE CRYSTALS [J].
GOWERS, JP ;
LEE, PA .
SOLID STATE COMMUNICATIONS, 1970, 8 (18) :1447-&
[10]   PREPARATION AND OPTICAL PROPERTIES OF GROUP 4-62 CHALCOGENIDES HAVING CDI2 STRUCTURE [J].
GREENAWAY, DL ;
NITSCHE, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (09) :1445-+