STRUCTURE DETERMINATION AND ELECTRICAL-PROPERTIES OF A NEW MISFIT LAYERED SELENIDE [(PBSE)1.10NBSE2]

被引：24

作者：

AURIEL, C

ROESKY, R

MEERSCHAUT, A

ROUXEL, J

机构：

[1] I.M.N. Laboratoire de Chimie des Solides, 44072 Nantes Cedex 03, 2, rue de la Houssinière

来源：

MATERIALS RESEARCH BULLETIN | 1993年 / 28卷 / 03期

关键词：

LEAD; NIOBIUM; SELENIUM;

D O I：

10.1016/0025-5408(93)90158-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of the misfit layer compound (PbSe)1.10NbSe2 has been determined by single crystal X.ray diffraction. PbSe and NbSe2 layers alternating in the stacking direction c make up the structure. The PbSe layer forms approximately an NaCl structure type, whereas in NbSe2 the Nb atoms are located within slightly distorted trigonal prisms of selenium. Refinements were performed in the orthorhombic space groups Fm2m for PbSe and Cm2m for NbSe2 [ PbSe : a1 = 6.202(3)angstrom, b = 6.058(1)angstrom, c = 24.952(9)angstrom ; NbSe2 : a2 = 3.422(1)angstrom, b = 6.056(1)angstrom, c = 24.940(8)angstrom] and converged to R(f1) = 0.073 and R(f2) = 0.071, respectively.

引用

页码：247 / 254

页数：8

共 18 条

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