BROMINE-METHANOL AS AN ETCHANT FOR SEMICONDUCTORS - A FUNDAMENTAL-STUDY ON GAP .2. INTERACTION BETWEEN CHEMICAL AND ANODIC ETCHING OF P-TYPE GAP

被引：11

作者：

STRUBBE, K

GOMES, WP

机构：

[1] Laboratorium voor Fysische Chemie, Universiteit Gent

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 11期

关键词：

D O I：

10.1149/1.2221027

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Rotating disk and rotating ring-disk electrode experiments were performed to investigate the anodic behavior of dark p-type GaP electrodes in bromine-methanol solutions. A strong interaction occurred between chemical etching of the semiconductor by bromine and anodic decomposition. A mechanism for the anodic dissolution reaction is proposed in which electrochemical as well as chemical reaction steps participate. Marked differences between the polar (111) and (111BAR) faces are observed and discussed.

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页码：3301 / 3305

页数：5

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