EXCITON-TUNNELING-LIFETIME ENHANCEMENT BY THE COULOMB INTERACTION IN A QUANTUM WELL WITH A PERPENDICULAR FIELD

被引:9
作者
WU, JW
NURMIKKO, AV
机构
[1] INDIANA UNIV,DEPT PHYS,BLOOMINGTON,IN 47405
[2] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
来源
PHYSICAL REVIEW B | 1988年 / 37卷 / 05期
关键词
D O I
10.1103/PhysRevB.37.2711
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2711 / 2713
页数:3
相关论文
共 12 条
[1]   EXACT CALCULATIONS OF QUASI-BOUND STATES OF AN ISOLATED QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD - QUANTUM-WELL STARK RESONANCE [J].
AHN, D ;
CHUANG, SL .
PHYSICAL REVIEW B, 1986, 34 (12) :9034-9037
[2]   ELECTRONIC-STRUCTURE OF AN ISOLATED GAAS-GAALAS QUANTUM WELL IN A STRONG ELECTRIC-FIELD [J].
AUSTIN, EJ ;
JAROS, M .
PHYSICAL REVIEW B, 1985, 31 (08) :5569-5572
[3]   VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].
BASTARD, G ;
MENDEZ, EE ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1983, 28 (06) :3241-3245
[4]  
BONNEFOI AR, 1985, APPL PHYS LETT, V47, P886
[5]   ELECTRONIC-STRUCTURE OF A GAAS QUANTUM-WELL IN AN ELECTRIC-FIELD [J].
BORONDO, F ;
SANCHEZDEHESA, J .
PHYSICAL REVIEW B, 1986, 33 (12) :8758-8761
[6]  
FU Q, 1987, APPL PHYS LETT, V51, P578
[7]   BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2173-2176
[8]   ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
GOSSARD, AC ;
WIEGMANN, W ;
WOOD, TH ;
BURRUS, CA .
PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060
[9]   LIFETIME ENHANCEMENT OF TWO-DIMENSIONAL EXCITONS BY THE QUANTUM-CONFINED STARK-EFFECT [J].
POLLAND, HJ ;
SCHULTHEIS, L ;
KUHL, J ;
GOBEL, EO ;
TU, CW .
PHYSICAL REVIEW LETTERS, 1985, 55 (23) :2610-2613
[10]   FIELD-INDUCED LIFETIME ENHANCEMENT AND IONIZATION OF EXCITONS IN GAAS/ALGAAS QUANTUM-WELLS [J].
POLLAND, HJ ;
KOHLER, K ;
SCHULTHEIS, L ;
KUHL, J ;
GOBEL, EO ;
TU, CW .
SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (04) :309-312