BORON CONCENTRATION AND IMPURITY-TO-BAND ACTIVATION-ENERGY IN DIAMOND

被引：21

作者：

BOURGOIN, JC ^{[1
]}

KRYNICKI, J ^{[1
]}

BLANCHARD, B ^{[1
]}

机构：

[1] CEN,F-38041 GRENOBLE,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 52卷 / 01期

关键词：

D O I：

10.1002/pssa.2210520132

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The determination of the boron concentration, NA, in synthetic boron diamonds is performed using secondary ion mass spectroscopy, electrical (conductivity and capacitance), and optical absorption methods. Evaluation of the concentration of compensating centres, ND, and measurement of the activation energy, E, for excitation of holes into the valence band is made through optical and electrical methods. The variation of E versus NA and ND can be reasonably explained by the influence of the ionized impurities on holes bound to boron. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：293 / 298

页数：6

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