CDSE THIN-FILM FIELD-EFFECT TRANSISTOR

被引：6

作者：

RAO, MK

JAWALEKAR, SR

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 46卷 / 03期

关键词：

D O I：

10.1080/00207217908901004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A thin-film field effect transistor appears to be the most promising for an all thin-field integrated circuit. In this paper, the authors have reported a coplanar device incorporating an evaporated CdSe film and an anodically grown aluminum oxide layer. The fabrication is based on optimized deposition conditions. The dc characteristics of the device are presented. For the transistor, the device parameters are calculated from the I-V characteristics.

引用

页码：309 / 311

页数：3

共 7 条

[1] THIN-FILM TRANSISTORS [J].

ANDERSON, JC .

THIN SOLID FILMS, 1976, 36 (02) :299-312

[2]

JAWALEKAR SR, 1975, DIGEST INT ELECTRONI, P135

[3] HALL VOLTAGE MEASUREMENTS ON CDSE FILMS [J].

RAO, MK ;

JAWALEKAR, SR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01) :K31-K33

[4] RESISTIVITY MEASUREMENTS ON CDSE FILMS [J].

RAO, MK ;

JAWALEKAR, SR .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01) :K93-K95

[5]

RAO MK, 1977, 7TH P INT VAC C 3RD, P1951

[6]

Tickle A. C., 1969, THIN FILM TRANSISTOR

[7]

Venkateswarlu N., 1976, Journal of the Institution of Electronics and Telecommunication Engineers, V22, P739

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