LATERAL DEFINITION OF MONO-CRYSTALLINE GAAS PREPARED BY MOLECULAR-BEAM EPITAXY

被引:23
作者
HIYAMIZU, S
NANBU, K
FUJII, T
SAKURAI, T
HASHIMOTO, H
RYUZAN, O
机构
关键词
D O I
10.1149/1.2129951
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1562 / 1567
页数:6
相关论文
共 31 条
[1]   PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J].
BALLAMY, WC ;
CHO, AY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :481-484
[2]   ELECTRICAL-PROPERTIES OF THERMAL OXIDES ON GAAS [J].
BUTCHER, DN ;
SEALY, BJ .
ELECTRONICS LETTERS, 1977, 13 (19) :558-559
[3]   GAAS PLANAR TECHNOLOGY BY MOLECULAR-BEAM EPITAXY (MBE) [J].
CHO, AY ;
BALLAMY, WC .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :783-785
[4]   GROWTH OF 3-DIMENSIONAL DIELECTRIC WAVEGUIDES FOR INTEGRATED OPTICS BY MOLECULAR-BEAM EPITAXY METHOD [J].
CHO, AY ;
REINHART, FK .
APPLIED PHYSICS LETTERS, 1972, 21 (08) :355-&
[5]   CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J].
Cowher, M.E. ;
Sedgwick, T.O. .
1600, (119)
[6]   POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE [J].
FUKUTA, M ;
SUYAMA, K ;
SUZUKI, H ;
NAKAYAMA, Y ;
ISHIKAWA, H .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :312-317
[7]   PROPERTIES OF HETEROEPITAXIAL INXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].
HIYAMIZU, S ;
FUJII, T ;
NANBU, K ;
MAEKAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :79-85
[8]  
HIYAMIZU S, 1977, 9TH P C SOL STAT DEV
[9]  
IIDA S, 1972, J CRYST GROWTH, V13, P336
[10]   ANISOTROPY IN ETCHING AND DEPOSITION OF SELECTIVE EPITAXIAL GROWTH OF GAAS II [J].
ISHIBASHI, Y ;
YAMAGUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) :525-+