RAMAN-SPECTRA OF GAAS-ALXGA1-XAS SUPERLATTICES

被引:6
作者
CHANG, YC [1 ]
REN, SF [1 ]
WEN, GH [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1006/spmi.1993.1030
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Systematic theoretical studies of Raman spectra of GaAs-AlxGa1-xAs superlattices are presented. The electronic states are described by an envelope-function method and the phonon modes are described in a microscopic rigid-ion model. Both resonant and nonresonant Raman scattering processes are considered. For resonant Raman scattering, the effects of discrete exciton states plus the continuum and the valence-band mixing are included via a k-space sampling method. Both the Fröhlich and deformation-potential mechanisms for electron-phonon coupling are considered. These two mechanisms are responsible for principal features in the z(x, x)z̄ and z(x, y)z̄ geometries, respectively. We find that the effects of exciton continuum states are quite important and the resonant Raman spectra so obtained are in much better agreement with experiment compared to those without including the exciton continuum states. © 1993 Academic Press.
引用
收藏
页码:165 / 168
页数:4
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