SEMICONDUCTING BEHAVIOR IN ANTIMONY-DOPED BISMUTH-FILMS

被引：8

作者：

DAS, VD

JAGADEESH, MS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 01期

关键词：

Compendex;

D O I：

10.1116/1.571022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：89 / 92

页数：4

共 16 条

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