RECTIFICATION BY RESONANT TUNNELING DIODES

被引：42

作者：

WINGREEN, NS ^{[1
]}

机构：

[1] WEIZMANN INST SCI,DEPT NUCL PHYS,IL-76100 REHOVOT,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.102820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The coefficient of rectification, arect(ω), for a resonant tunneling diode is obtained from an exact solution for the transmission probability T(ε) through an oscillating resonant level. The experimentally observed broadening and lowering of the peaks in arect(ω) with increasing frequency ω are explained by the increase in spacing between the sidebands in T(ε). Most important, arect(ω) is entirely determined by the dc current. Consequently, any mechanism which broadens the negative differential conductance region will cause a dc-like coefficient of rectification to persist to frequencies higher than the inverse charge-transport time.

引用

页码：253 / 255

页数：3

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