SUBMICROMETER NEAR-INTRINSIC THIN-FILM SOI COMPLEMENTARY MOSFETS

被引:32
作者
LEE, CT [1 ]
YOUNG, KK [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1109/16.43678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2537 / 2547
页数:11
相关论文
共 23 条
[1]   GENERALIZED SCALING THEORY AND ITS APPLICATION TO A 1/4 MICROMETER MOSFET DESIGN [J].
BACCARANI, G ;
WORDEMAN, MR ;
DENNARD, RH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :452-462
[2]  
BORLAND JO, 1987, IEDM TECH DIG, P12
[3]   REDUCTION OF KINK EFFECT IN THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :97-99
[4]   SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].
COLINGE, JP .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) :244-246
[5]  
ESTREICH DB, 1980, G2019 STANF U STANF
[6]  
KONDO M, 1978, IEEE SOLID STATE CIR, P148
[7]  
LEE CT, 1988, IEEE SOS SOI TECHNOL
[8]  
LIM HK, 1984, IEEE T ELECTRON DEV, V31, P401
[9]  
LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244
[10]  
Malhi S. D. S., 1982, International Electron Devices Meeting. Technical Digest, P107